Semiconductor devices and methods of fabricating semiconductor devices

A semiconductor device comprising:

• a substrate;
• parallel first conductive lines on the substrate;
• parallel second conductive lines spaced apart from the first conductive lines and above the first conductive lines, relative to an uppermost surface of the substrate;
• an interlayer dielectric on the first and second conductive lines;
• a first connection structure electrically connecting the first conductive lines;
• and
• a second connection structure electrically connecting the second conductive lines,
• wherein at least one of the first connection structure and the second connection structure comprises a connection element extending in a first direction that intersects with a second direction in which the first and second conductive lines extend, and
• wherein an uppermost surface of the connection element is substantially coplanar with an uppermost surface of the interlayer dielectric and a height of a lowermost surface of the connection element is equivalent to or lower than a height of uppermost surfaces of the first and second conductive lines, relative to the uppermost surface of the substrate.

A semiconductor device comprising:

• a substrate;
• a plurality of word lines on the substrate;
• a dielectric layer on the substrate and adjacent the plurality of word lines;
• a connection element comprising a conductive material in the dielectric layer;
• a plurality of contacts on the connection element;
• and
• a conductive interconnection on one of the plurality of contacts that are on the connection element and on a contact that is spaced apart from the connection element.