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US 2014/0197515 A1Published application
High voltage circuit layout structure
AssigneeMonolithic Power Systems, Inc.
InventorJoseph Urienza
Life of this patent
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Abstract
A high voltage circuit layout structure has a P-type substrate; a first N-type tub, a second N-type tub, a third N-type tub, a first P-type tub with a first width and a second P-type tub with a second width formed on the P-type substrate; wherein the first P-type tub is formed between the first N-type tub and the second N-type tub; and the second P-type tub is formed between the second N-type tub and the third N-type tub.
Claims18
A high voltage circuit layout structure, comprising:
- a P-type substrate;
- a first N-type tub, a second N-type tub, and a third N-type tub formed on the P-type substrate, wherein the first N-type tub's potential and the third N-type tub's potential follow relatively with the second N-type tub's potential;
- a first P-type tub having a first width formed on the P-type substrate and formed between the first N-type tub and the second N-type tub, the first width being dependent on the punch-through voltage requirement between the first N-type tub and the second N-type tub;
- and
- a second P-type tub having a second width formed on the P-type substrate and formed between the second N-type tub and the third N-type tub, the second width being dependent on the punch-through voltage requirement between the second N-type tub and the third N-type tub.
2 more elements
A high voltage circuit layout structure, comprising:
- a P-type substrate;
- a plurality of N-type tubs formed on the P-type substrate, wherein each of N-type tub's potential relatively follows the adjacent N-type tubs' potential;
- and
- at least one P-type tub formed on the P-type substrate and formed between two close-by N-type tubs, the P-type tub having a width with a minimum requirement and a maximum requirement.
1 more element
Dependencies are inferred from the claim text.