Cmp compositions and methods for suppressing polysilicon removal rates
OwnerKevin MOEGGENBORG, William Ward +2inventors
InventorsKevin MOEGGENBORG, William Ward, Ming-Shih Tsai, Francesco De Rege Thesauro
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Abstract
The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.
Claims10
A chemical-mechanical polishing composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate, the composition comprising about 0.01 to about 15 percent by weight abrasive particles suspended in an aqueous carrier containing about 10 to about 10,000 ppm of a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof.
Dependencies are inferred from the claim text.