US 2014/0193984 A1 · APPARATUS AND METHOD FOR REDUCING RESIDUAL STRESS OF SEMICONDUCTOR

Abstract

An apparatus for reducing residual stress of a semiconductor includes a stage configured to support a semiconductor wafer having the residual stress generated by a semiconductor manufacturing process. The apparatus includes an intense pulsed light (IPL) irradiation unit configured to irradiate IPL to the semiconductor wafer to reduce the residual stress of the semiconductor wafer, the IPL radiation unit being separated from the stage. The apparatus further includes at least one alignment unit configured to adjust relative positions of the stage and the IPL irradiation unit.

Claims20

Dependent claims

An apparatus for reducing residual stress of a semiconductor, the apparatus comprising:

a stage configured to support a semiconductor wafer having the residual stress generated by a semiconductor manufacturing process;
an intense pulsed light (IPL) irradiation unit configured to irradiate IPL to the semiconductor wafer to reduce the residual stress of the semiconductor wafer, the IPL radiation unit being separated from the stage;
and
at least one alignment unit configured to adjust relative positions of the stage and the IPL irradiation unit.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

14/143,759Filed 30 Dec 2013

Priority

KR 10-2013-000311810 Jan 2013

Published

10 Jul 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10P 72/0436
Apparatus for thermal treatment: mainly by radiation
H10P 34/422
With electromagnetic radiation, e.g. laser annealing: using incoherent radiation
H10P 72/50
Handling or holding of wafers, substrates or devices during manufacture or treatment thereof: for positioning, orientation or alignment
H10P
Generic processes or apparatus for the manufacture or treatment of devices covered

Apparatus and method for reducing residual stress of semiconductor

Life of this patent

Apparatus and method for reducing residual stress of semiconductor

Life of this patent

Abstract

Claims20