Compositon for forming metal oxide-containing film and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTsutomu OGIHARA, Takafumi UEDA, Seiichiro TACHIBANA, Yoshinori TANEDA
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTsutomu OGIHARA, Takafumi UEDA, Seiichiro TACHIBANA, Yoshinori TANEDA
Estimating the term…
The invention provides a composition for forming a metal oxide-containing film comprising, as a component (A), a metal oxide-containing compound A1 obtained by hydrolysis and/or condensation of one or more kinds of hydrolysable metal compounds shown by the following general formula (A-1), as a component (B), an aromatic compound shown by the following general formula (B-1), the compound generating a hydroxyl group by thermal and/or an acid. There can be provided a composition for a resist lower layer film, which has high etching selectivity, capable of subjecting to stripping under mild conditions than the conventional process, has excellent pattern adhesiveness, and fine pattern formation can be performed.
A composition for forming a metal oxide-containing film comprising:
Dependencies are inferred from the claim text.