Back to results
US 2014/0191308 A1Published application
Self-aligned double patterning for memory and other microelectronic devices
AssigneeSpansion LLC
InventorTzu-Yen HSIEH
Life of this patent
Estimating the term…
Abstract
A semiconductor device is provided. The semiconductor device includes a microelectronic layer, a first mask layer formed on the microelectronic layer having first features separated by first openings, and a second mask layer formed on the first mask layer having second features that are separated by second openings. Each second feature is centrally located on a respective one of the first features. A length each second feature in a dimension is substantially equal to a length of a respective one of the first openings in the dimension.
Claims17
A semiconductor device, comprising:
- a microelectronic layer;
- a first mask layer formed on the microelectronic layer having first features separated by first openings;
- and
- a second mask layer formed on the first mask layer having second features that are separated by second openings;
- wherein each second feature is centrally located on a respective one of the first features and wherein a length of each second feature in a dimension is substantially equal to a length of a respective one of the first openings in the dimension.
2 more elements
Dependencies are inferred from the claim text.