Dual Damascene Metal Gate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Chieh Wang, Wen-Chu Hsiao, Ying-Min Chou, Hsiang-Hsiang Ko
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Abstract
A method for fabricating a dual damascene metal gate includes forming a dummy gate onto a substrate, disposing a protective layer on the substrate and the dummy gate, and growing an expanding layer on sides of the dummy gate. The method further includes removing the protective layer, forming a spacer around the dummy gate, and depositing and planarizing a dielectric layer. The method further includes selectively removing the expanding layer, and removing the dummy gate.
Claims20
A method for fabricating a metal gate, the method comprising:
- forming a dummy gate onto a substrate;
- disposing a protective layer on the substrate and on top of the dummy gate;
- growing an expanding layer on sides of the dummy gate;
- removing the protective layer;
- forming a spacer around the dummy gate and the expanding layer;
- depositing and planarizing a dielectric layer around the spacer;
- removing the expanding layer;
- and
- removing the dummy gate.
A method for fabricating a metal gate, the method comprising:
- disposing a protective layer on a substrate and a dummy gate, the protective layer not being formed on sides of the dummy gate;
- growing, through an epitaxial process, an expanding layer on sides of the dummy gate;
- forming a spacer around the dummy gate after removing the protective layer;
- filling in area around the dummy gate with a dielectric material;
- planarizing the dielectric layer, spacer, and the dummy gate;
- removing the expanding layer before removing the dummy gate.
A dual damascene metal gate comprising:
- a lower portion of a metal gate surrounded by a dielectric layer, the lower portion of the metal gate having a first width;
- an upper portion of the metal gate having a second dimension that is larger than the first dimension such that there is a shelf between the lower portion and the upper portion;
- wherein, the space for the lower portion of the metal gate was formed by a dummy gate and the space for the upper portion of the metal gate was formed by both a dummy gate and an epitaxially grown expanding layer on the sides of the dummy gate.
Dependencies are inferred from the claim text.