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US 2014/0191229 A1Published application
Semiconductor structure including a zirconium oxide material
AssigneeMicron Technology, Inc.
InventorsDale W. Collins, D.V. Nirmal Ramaswamy, Matthew N. Rocklein, Swapnil A. Lengade
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Abstract
Semiconductor structures including a zirconium oxide material and methods of forming the same are described herein. As an example, a semiconductor structure can include a zirconium oxide material, a perovskite structure material, and a noble metal material formed between the zirconium oxide material and the perovskite structure material.
Claims21
1-20. (canceled)
A semiconductor structure comprising:
- a zirconium oxide material;
- a perovskite structure material;
- and
- a noble metal material, wherein the zirconium oxide material, the perovskite structure material, and the noble metal material are formed between a base semiconductor material and an electrode material.
1 more element
A method of forming a semiconductor structure comprising:
- forming a zirconium oxide material;
- forming a noble metal material;
- and
- forming a perovskite structure material, wherein the zirconium oxide material, the perovskite structure material, and the noble metal material are formed between a base semiconductor material and an electrode material.
1 more element
A semiconductor structure comprising:
- a resistance variable material;
- a crystallinity promoting material that promotes crystallinity of the resistance variable material;
- and
- a noble metal material;
- wherein the crystallinity promoting material, the resistance variable material, and the noble metal material are formed between a base semiconductor material and an electrode material.
2 more elements
Dependencies are inferred from the claim text.