Thin film transistor, method of fabricating the same, and display apparatus having the same

A method of manufacturing a thin film transistor, comprising:

• forming an oxide semiconductor pattern including an oxide semiconductor material on a base substrate;
• forming a gate insulating layer covering the oxide semiconductor pattern;
• forming a gate electrode on the gate insulating layer and overlapping with the oxide semiconductor pattern;
• performing a first plasma treatment on first areas of the oxide semiconductor pattern which include opposing ends of the oxide semiconductor pattern to form a source electrode and a drain electrode;
• and
• performing a second plasma treatment on second areas of the oxide semiconductor pattern, which are not overlapped with the gate electrode between the source electrode and the drain electrode, to form a plurality of low carrier concentration areas.

A display apparatus comprising:

• a base substrate;
• a thin film transistor disposed on the base substrate;
• and
• a display device that makes contact with the thin film transistor, wherein the thin film transistor comprises:
• a semiconductor layer disposed on the base substrate and including an oxide semiconductor material,
• a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer,and
• a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer;
• a gate insulating layer disposed on the semiconductor layer;
• and
• a gate electrode disposed on the gate insulating layer.

A display apparatus comprising:

• a base substrate;
• a thin film transistor disposed on the base substrate;
• a display device that makes contact with the thin film transistor;
• an insulating layer disposed between the base substrate and the thin film transistor;
• wherein the thin film transistor comprises:
• a semiconductor layer disposed on the insulating layer and including an oxide semiconductor material,
• a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer,
• a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer,
• a data line connected to the source electrode, and
• a first electrode connected to the drain electrode, wherein one end of the source electrode extends to and is connected to the data line and one end of the drain electrode extends to and is connected to the first electrode of the display device and wherein the source electrode, the drain electrode, the low carrier concentrations areas, the semiconductor layer, the data line and the first electrode each include a same material as one another and are each disposed on a same layer as one another;
• a gate insulating layer disposed on the semiconductor layer;
• a gate electrode disposed on the gate insulating layer and overlapping with the semiconductor layer;
• and
• a protection layer disposed on the thin film transistor, and wherein the protection layer exposes a portion of the first electrode.