Methods and Vehicles for High Productivity Combinatorial Testing of Materials for Resistive Random Access Memory Cells

A method comprising:

• providing a substrate comprising a first site isolated region and a second site isolated region,
• the first site isolated region comprising a first base structure, the second site isolated region comprising a second base structure,
• wherein the first base structure and the second base structure have the same composition and thickness,
• wherein the first base structure and the second base structure are formed from a conductive material;
• wherein the first base structure is connected to a first connector structure for connecting to an electrical lead of a test probe;
• wherein the second base structure is connected to a second connector structure for connecting to an electrical lead of a test probe;
• forming a first test sample over the first base structure and forming a second test sample over the second base structure,
• the first test sample and the second test sample have different compositions,
• the first test sample and the second test sample formed from different dielectric materials,
• wherein the first base structure and the first test sample form a first interface and wherein the second base structure and the second test sample form a second interface,
• forming a layer over the first test sample and the second test sample;
• and
• etching the first test sample, the second test sample, and the layer in the same operation while the first test sample protects the first interface and the second test sample protects the second interface during etching,
• wherein etching forms a first stack comprising a portion of the first test sample and a first portion of the layer,
• wherein etching also forms a second stack comprising a portion of the second test sample and a second portion of the layer,
• wherein the first stack fully covers the first base structure forming a first resistive random access memory cell and the second stack fully covers the second base structure forming a second resistive random access memory cell.