Semiconductor device, manufacturing method thereof and operating method thereof

A manufacturing method of a semiconductor device, comprising:

• providing a substrate;
• forming a first well and a second well on the substrate;
• forming a first heavily doping region in the first well;
• forming a second heavily doping region in the second well;
• forming a third heavily doping region in the first well, wherein the first heavily doping region and the third heavily doping region are separated from each other;
• and
• forming an electrode layer on the first well, wherein each of the second well, the first heavily doping region, and the second heavily doping region has a first type doping, each of the substrate, the first well, and the third heavily doping region has a second type doping, and the first type doping is complementary to the second type doping.

An operating method of a semiconductor device, wherein the semiconductor device comprises a substrate, a first well, a second well, a first heavily doping region, a second heavily doping region, a third heavily doping region, and an electrode layer;

• the first well and second well are disposed on the substrate;
• the first heavily doping region is disposed in the first well;
• the second heavily doping region is disposed in the second well;
• the third well is disposed in the first well and is separated from the first well;
• the electrode layer is disposed on the first well;
• each of the second well, the first heavily doping region, and the second heavily doping region has a first type doping;
• each of the substrate, the first well, and the third heavily doping region has a second type doping;
• the first type doping is complementary to the second type doping;
• and the operating method comprises:
• applying a gate voltage to the electrode layer for generating an inversion layer between the first well and the electrode layer;
• applying an emitter voltage to the first heavily doping region;
• applying a collector voltage to the second heavily doping region;
• and
• applying a base voltage to the third heavily doping region.