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US 2014/0151806 A1Published application
Semiconductor Device Having SSOI Substrate
AssigneeInternational Business Machines Corporation
InventorsVeeraraghavan S. Basker, Ali Khakifirooz, Pranita Kerber, Alexander Reznicek
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Abstract
A method comprises: forming a tensile SSOI layer on a buried oxide layer on a bulk substrate; forming a plurality of fins in the SSOI layer; removing a portion of the fins; annealing remaining portions of the fins to relax a tensile strain of the fins; and merging the remaining portions of the fins.
Claims6
An apparatus for a semiconductor device, the apparatus comprising:
- a substrate having a tensile SSOI layer;
- a plurality of fins formed on the SSOI layer and extending perpendicular from the substrate and parallel to each other, the fins having a relaxed tensile strain;
- a gate positioned across and extending transverse to the fins, the fins on a first side of the gate being in communication with sources and the fins on a second side of the gate being in communication with drains;
- a source region merging the fins on the first side of the gate;
- and
- a drain region merging the fins on the second side of the gate;
- wherein the source region and the drain region comprise a layer formed by epitaxial growth of at least one of Si and SiGe.
4 more elements
Dependencies are inferred from the claim text.