Electrostatic discharge protection device

An electrostatic discharge protection device comprising:

• a semiconductor device including a first electrode, a second electrode and a gate electrode;
• a capacitor connected between the second electrode and the gate electrode;
• and
• a resistor connected between the gate electrode and the first electrode,
• wherein the semiconductor device comprises:
• a first conductivity type well;
• a second conductivity type well in contact with the first conductivity type well;
• first and second doping regions formed in the first conductivity type well, connected in common to form the first electrode and having different conductivity types from each other;
• third and fourth doping regions formed in the second conductivity type well, connected in common to form the second electrode and having different conductivity types from each other;
• a fifth doping region in the second conductivity type well between the first and second doping regions and the third and fourth doping regions;
• and
• a conductive material electrically isolated from the first conductivity type well on the first conductivity type well adjacent to an interface between the first and second conductivity type wells to form the gate electrode.

An electrostatic discharge circuit, comprising:

• a lateral bipolar junction transistor;
• a vertical bipolar junction transistor;
• and
• a doping region to disrupt current flow and to thereby increase the holding voltage of the electrostatic discharge circuit.