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US 2014/0151683 A1Published application
Thin film transistor
AssigneeSamsung Display Co., Ltd.
InventorsSang Ho Park, Su-Hyoung Kang, Yoon Ho Khang, Dong Jo Kim, Joon Yong Park, Sang Won Shin, Dong Hwan Shim
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Abstract
A thin film transistor includes an oxide semiconductor, in which an oxygen defect content of the oxide semiconductor is no greater than about 0.15 based on an entire oxygen content included in the oxide semiconductor.
Claims20
A thin film transistor, comprising:
- an oxide semiconductor,
- wherein an oxygen defect content of the oxide semiconductor is no greater than about 0.15 based on an entire oxygen content included in the oxide semiconductor.
A thin film transistor, comprising:
- an oxide semiconductor,
- wherein a tail state in an interface trap at a vicinity of a conduction band of the oxide semiconductor is no greater than about 1021 cm−3eV−1, and a deep state in the interface trap at the vicinity of the conduction band of the oxide semiconductor is no greater than about 1018 cm−3eV−1.
Dependencies are inferred from the claim text.