Substrate supporting unit and substrate treating apparatus and method
OwnerTakayuki FUKASAWAinventor
Life of this patent
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Abstract
An apparatus for treating a substrate may include a process chamber. The process chamber may include a reaction space and an opening portion for receiving the substrate into the reaction space. The apparatus may further include a dielectric layer. The apparatus may further include a plurality of support elements disposed on the dielectric layer and configured to contact a bottom surface of the substrate for supporting the substrate. The plurality of support elements may include a first support element and a second support element immediately neighboring the first support element.
Claims20
An apparatus of treating a substrate, comprising:
- a process chamber that provides a reaction space in which the substrate is treated;
- and
- a substrate supporting unit disposed in the process chamber to support the substrate, the substrate supporting unit comprising:
- a first dielectric layer disposed under the substrate;
- and
- a plurality of protrusions that includes a dielectric material and is disposed on the first dielectric layer to make contact with the substrate, wherein the protrusions are spaced apart from each other and a distance between two protrusions adjacent to each other among the protrusions is in a range of about 0.01 to about two times of a thickness of the substrate.
A method for treating a substrate, the method comprising:
- disposing the substrate inside a process chamber;
- using a plurality of support elements to contact a bottom surface of the substrate for supporting the substrate, wherein the plurality of support elements includes a first support element and a second support element immediately neighboring the first support element, wherein a distance between the first support element and the second support element is less than or equal to two times a thickness of the substrate;
- processing the substrate inside the process chamber;
- and
- cooling the substrate using a cooling member, wherein a first heat is transferred from the substrate through the plurality of support members to the cooling member.
The method of claim 18, wherein the ratio of the first area size to the second area size is less than or equal to 50%, and wherein the ratio of the first area size to the second area size is greater than or equal to 0.1%.
Dependencies are inferred from the claim text.