Semiconductor device including line-type active region and method for manufacturing the same
AssigneeSK hynix Inc.
InventorKyung Do KIM
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Abstract
A semiconductor device having a line-type active region and a method for manufacturing the same are disclosed. The semiconductor device includes an active region configured in a successive line type, at least one active gate having a first width and crossing the active region, and an isolation gate having a second width different from the first width and being formed between the active gates. The isolation gate's width and the active gate's width are different from each other to guarantee a large storage node contact region, resulting in increased device operation characteristics (write characteristics).
Claims5
A semiconductor device comprising:
- an active region extending along a first direction;
- at least one active gate having a first width and crossing the active region;
- and
- first and second isolation gates having a second width different from the first width, the first and second isolation gates isolating the active region.
5-15. (canceled)
Dependencies are inferred from the claim text.