Reduced pressure processing chamber and exhaust arrangement

A system comprising:

• a process chamber having a process volume therein and configured to process at least one substrate having a large planar surface area, the process chamber comprising a chamber wall to contain one or more process gases used to etch the substrate or deposit a film on the substrate in the process volume, the chamber wall comprising:
• an inner surface;
• an outer surface;
• and
• one or more openings through the chamber wall through which the process gases pass to exit from the process volume;
• wherein the system further includes at least one enclosure along the outer surface of the chamber wall that forms a channel defining a flow path between at least one of the one or more openings and an outlet port of the enclosure;
• and
• a vacuum pump coupled to the outlet port to remove process gases through the outlet port.

A process gas container comprising:

• a plurality of reinforcement ribs along an outside surface of the process gas container;
• one or more openings in the process gas container with at least one of the one or more openings disposed between at least two of the reinforcement ribs;
• and
• a channel along the outside surface of the process gas container, the channel comprising:
• a first side wall comprising at least one of the reinforcement ribs;
• a second side wall comprising at least one other of the reinforcement ribs;
• a third wall extending from the first side wall to the second side wall and which is spaced from the outside surface of the process gas container, and wherein at least part of the third wall can be selectively separated from the channel to open the channel and provide access to the channel;
• a fourth wall comprising a portion of the outside surface of the process container;
• at least one of the one or more openings in the process gas container extending into the channel;
• and
• an outlet coupled to a pump and which pumps gases from said channel.