Method of fabricating semiconductor device
AssigneeUnited Microelectronics Corp.
InventorPing-Chia Shih
Life of this patent
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Abstract
A method of fabricating a semiconductor device includes the following steps. At first, two gate stack layers are formed on a semiconductor substrate, and a material layer covering the gate stack layers is formed on the semiconductor substrate. Subsequently, a part of the material layer is removed to form a sacrificial layer between the gate stack layers, and a spacer at the opposite lateral sides of the gate stack layers. Furthermore, a patterned mask covering the gate stack layers and the spacer and exposing the sacrificial layer is formed, and the sacrificial layer is removed.
Claims16
A method of fabricating a semiconductor device, comprising:
- forming two gate stack layers on a semiconductor substrate;
- forming a single dielectric layer completely covering the gate stack layers;
- forming a material layer covering the gate stack layers and the dielectric layer on the semiconductor substrate;
- removing a part of the material layer to form an isolated spacer having an arc surface at the opposite lateral sides of the gate stack layers, and a remaining material layer between the gate stack layers being merged into as a sacrificial layer;
- forming a patterned mask covering the gate stack layers and the spacer and exposing the sacrificial layer;
- and
- removing the sacrificial layer.
(canceled)
Dependencies are inferred from the claim text.