Mask Set for Double Exposure Process and Method of Using the Mask Set
AssigneeUnited Microelectronics Corp.
InventorsHui-Fang Kuo, Ming-Jui Chen, Ting-Cheng Tseng, Cheng-Te Wang
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Abstract
A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.
Claims14
A mask set for double exposure process, comprising:
- a first mask having a first mask pattern, said first mask pattern is provided with a first base and a plurality of first teeth and protruding portions extending from said first base and alternatively aligning along a first direction;
- and
- a second mask having a second mask pattern, said second mask pattern is provided with a second base and a plurality of second teeth extending from said second base, wherein said second base may at least partially overlap said first base so that each of said protruding portions at least partially overlaps one of said second teeth.
A method of forming a mask pattern on a substrate, comprising the steps of:
- providing a mask pattern having a base and a plurality of spaced-apart teeth;
- splitting said mask pattern into a first sub-mask pattern and a second sub-mask pattern, wherein said first sub-mask pattern is provided with a first base and a plurality of first teeth and protruding portions extending from said first base and alternatively aligning along a first direction, said second sub-mask pattern is provided with a second base and a plurality of second teeth extending from said second base, said second base may at least partially overlap said first base so that each of said protruding portion at least partially overlap one of said second teeth;
- forming two masks respectively having said first sub-mask pattern and said second sub-mask pattern;
- forming a photo-sensitive layer on said substrate;
- and
- using said two masks to respectively expose said photo-sensitive layer.
Dependencies are inferred from the claim text.