Implementing Semiconductor Signal-Capable Capacitors with Deep Trench and TSV Technologies

A method for implementing semiconductor signal-capable capacitors comprising:

• forming and implanting a deep trench N-well structure including masking an N− well region;
• hardening a mask photo-resist;
• forming and implanting said deep trench N− well structure;
• and removing said photo-resist;
• etching a Through-Silicon-Via (TSV);
• creating a plurality of N-well structures surrounding said TSV with at least one angled implant;
• depositing a dielectric layer surrounding said TSV;
• and
• filling said TSV filled with a conducting material.

A method for implementing semiconductor signal-capable capacitors comprising:

• forming and implanting a deep trench N-well structure
• etching a Through-Silicon-Via (TSV) including masking a Through-Silicon-Via (TSV) region;
• etching said Through-Silicon-Via (TSV) retaining and hardening photo-resist;
• creating a plurality of N-well structures surrounding said TSV with at least one angled implant;
• depositing a dielectric layer surrounding said TSV;
• and
• filling said TSV filled with a conducting material.