Thin film transistor, thin film transistor array panel, and method of manufacturing a thin film transistor array panel

A method of manufacturing a thin film transistor array panel, comprising:

• forming a gate line on a substrate, the gate line including a gate electrode;
• forming a gate insulating layer on the gate line;
• forming an oxide semiconductor layer on the substrate;
• forming a source electrode and a drain electrode on the oxide semiconductor layer;
• forming a first insulating layer on the source electrode and the drain electrode, the first insulating layer including a first contact hole;
• forming a data line on the first insulating layer, the data line intersecting the gate line;
• and
• forming a pixel electrode on the second insulating layer,
• wherein the source electrode and the drain electrode each comprise a metal oxide, and
• the data line is electrically connected to the source electrode through the first contact hole.

A thin film transistor comprising:

• a substrate;
• a gate electrode positioned on the substrate;
• a gate insulating layer positioned on the gate electrode;
• an oxide semiconductor layer positioned on the substrate;
• a source electrode and a drain electrode positioned on the oxide semiconductor layer;
• and
• a passivation layer positioned on the source electrode and the drain electrode,
• wherein the source electrode and the drain electrode are formed of a metal oxide, and upper surfaces of portions of the source electrode and the drain electrode overlapping the gate electrode contacts the passivation layer.