Process for semiconductor circuit

A semiconductor process for forming special pattern features, comprising:

• sequentially forming a target layer, a hard mask layer and a plurality of equally spaced-apart core bodies on a substrate, wherein said core bodies have the same width;
• forming spacers on sidewalls of said core bodies, wherein adjacent spacers are spaced-apart by a recess;
• removing said core bodies so that said spacers are spaced-apart on said hard mask layer;
• Using said spacers as a mask to pattern said hard mask layer into a plurality of spaced-apart hard mask bodies;
• removing said hard mask bodies outside of a first predetermined region;
• forming first photoresists respectively on several outermost said hard mask bodies within said first predetermined region;
• and
• using said first photoresists and remaining said hard mask bodies as a mask to pattern said target layer.