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US 2013/0256780 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorsTetsuya KAI, Masayuki TANAKA
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Abstract
A semiconductor device comprising: a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate; a charge accumulation film having a rough interface in the charge accumulation film provided on the tunnel insulating film; a block insulating film provided on the charge accumulation film; and a gate electrode provided on the block insulating film.
Claims12
A semiconductor device comprising:
- a semiconductor substrate;
- a tunnel insulating film provided on the semiconductor substrate;
- a charge accumulation film having a rough interface in the charge accumulation film provided on the tunnel insulating film;
- a block insulating film provided on the charge accumulation film;
- and
- a gate electrode provided on the block insulating film.
3 more elements
A method of manufacturing a semiconductor device comprising:
- forming a tunnel insulating film on a semiconductor substrate;
- forming a precursor film on the tunnel insulating film;
- forming a first charge accumulation film having rough surface formed by thermal oxidation;
- forming a second charge accumulation film on the first charge accumulation film;
- forming a block insulating film on the charge accumulation film;
- and
- forming a gate electrode on the block insulating film.
4 more elements
Dependencies are inferred from the claim text.