Strontium and barium precursors for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition
AssigneeAdvanced Technology Materials, Inc.
InventorsThomas M. Cameron, Chongying Xu
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Abstract
Cyclopentadienyl and indenyl barium/strontium metal precursors and Lewis base adducts thereof are described. Such precursors have utility for forming Ba- and/or Sr-containing films on substrates, in the manufacture of microelectronic devices or structures.
Claims20
A method of depositing a strontium ruthenium oxide film on a substrate, comprising carrying out an atomic layer deposition (ALD) process with strontium and ruthenium precursors, wherein the strontium precursor is bis(n-propyltetramethylcyclopentadienyl)strontium.
A method of depositing a film comprising strontium and ruthenium on a substrate, comprising carrying out an atomic layer deposition (ALD) process with strontium and ruthenium precursors, wherein the strontium precursor is bis(n-propyltetramethylcyclopentadienyl)strontium.
Dependencies are inferred from the claim text.