Methods for annealing a metal contact layer to form a metal silicidation layer

A method for forming a metal silicidation process in a contact structure in a semiconductor device, comprising:

• providing a substrate having film stack including a first dielectric layer disposed on a first electrode layer disposed thereon, wherein the film stack has an opening formed in the film stack through the first dielectric layer and the first electrode layer;
• forming a contact metal layer lining sidewalls and a bottom of the opening;
• providing a heat energy to the contact metal;
• supplying a gas mixture including a nitrogen gas and a hydrogen gas while providing the heat energy to the contact;
• and
• forming a metal silicide layer in the opening of the film stack.

A method for forming a metal silicidation process in a contact structure in a semiconductor device, comprising:

• providing a substrate having a contact metal layer disposed thereon in a thermal annealing processing chamber;
• providing a heat energy to the contact metal layer in the thermal processing chamber;
• supplying a gas mixture including only hydrogen gas while providing the heat energy to the contact layer in the thermal processing chamber;
• and
• forming an amorphous type metal silicide layer on the substrate.