Methods and systems for inspecting bonded wafers

A method of inspecting a bonded wafer arrangement,

• wherein the bonded wafer arrangement includes plural layers of a semiconductor wafer and at least one of an adhesive layer and a substrate attached to the semiconductor wafer, and wherein the method comprises:
• directing measuring radiation onto the bonded wafer arrangement;
• imaging at least a portion of the bonded wafer arrangement onto a detector using the measuring radiation having emerging from the bonded wafer arrangement, wherein an object side numerical aperture of the imaging is less than 0.05;
• and
• simultaneously detecting, using the detector, at least a portion of the measuring radiation emerging from the bonded wafer arrangement at a multitude of different spaced apart locations within the field of view;
• wherein the detected radiation has an intensity spectrum such that an intensity of the detected radiation having wavelengths less than 700 nm is less than 10% of a total intensity of the detected radiation and an intensity of the detected radiation having wavelengths greater than 1200 nm is less than 10% of the total intensity of the detected radiation.