Method for correcting layout pattern and method for manufacturing photomask

A method for manufacturing a photomask, comprising:

• providing a first layout pattern and a second layout pattern, wherein the first layout pattern comprises a first conducting line pattern, the second layout pattern comprises at least one contact via pattern, and the contact via pattern at least partially overlaps the first conducting line pattern;
• providing a mis-alignment value;
• verifying whether spacing between the contact via pattern and the first conducting line pattern is smaller than the mis-alignment value by a computing system;
• expanding the contact via pattern along a direction away from the spacing smaller than the mis-alignment value for generating a first modified contact via pattern;
• and
• outputting the second layout pattern to at least one photomask.

A method for manufacturing a photomask, comprising:

• providing a first layout pattern, a second layout pattern, and a third layout pattern, wherein the first layout pattern comprises a first conducting line pattern, the second layout pattern comprises at least one contact via pattern, the third layout pattern comprises a second conducting line pattern and a third conducting line pattern, the contact via pattern at least partially overlaps the first conducting line pattern, and the contact via pattern at least partially overlaps the second conducting line pattern;
• providing a mis-alignment value and a critical space value;
• verifying whether spacing between the contact via pattern and the first conducting line pattern is smaller than the mis-alignment value by a computing system;
• expanding the contact via pattern along a direction away from the spacing smaller than the mis-alignment value to generate a first modified contact via pattern;
• verifying whether spacing between the first modified contact via pattern and the third conducting line pattern is smaller than the critical space value by the computing system;
• shrinking the first modified contact via pattern along a direction away from the spacing smaller than the critical space value for generating a second modified contact via pattern, wherein spacing between the second modified contact via pattern and the third conducting line pattern is larger than or equal to the critical space value;
• and
• outputting the second layout pattern to at least one photomask.