Photomask
AssigneeNanya Technology Corporation
InventorWei-Cheng Shiu
Life of this patent
Estimating the term…
Abstract
A photomask is provided. The photomask is applied to a photolithography apparatus and includes a substrate with a mask pattern disposed thereon. The mask pattern includes at least one main pattern and a plurality of sub-resolution assistant features (SRAFs). The SRAFs are disposed around the main pattern and separated from each other, wherein a distance between each of the SRAFs and the main pattern is about 3 to 10 times a linewidth of the main pattern. The photomask would result in an improved imaging quality on the wafer.
Claims10
A photomask, applied to a photolithography apparatus and comprising a substrate and a mask pattern disposed on the substrate, the mask pattern comprising:
- at least one main pattern;
- and
- a plurality of sub-resolution assistant features (SRAFs), disposed around the main pattern, and separated from each other, wherein a distance between each of the SRAFs and the main pattern is 3 to 10 times a linewidth of the main pattern.
Dependencies are inferred from the claim text.