Wafer and method of processing wafer

A method of forming a semiconductor structure, comprising:

• forming a layer of dielectric material over a substrate, the substrate having a main portion, and the main portion having a substantially constant thickness;
• forming a photoresist layer over the layer of dielectric material;
• removing an edge portion of the photoresist layer to form an edge-processed photoresist layer;
• patterning the layer of dielectric material based on the edge-processed photoresist layer to form a patterned dielectric layer, a periphery of the patterned dielectric layer and a periphery of the main portion of the substrate being separated by a distance;
• forming a conductive layer over the patterned dielectric layer, a periphery of the conductive layer being within about 0.5% of a diameter of the substrate to the periphery of the patterned dielectric layer.

A method of processing a wafer including a substrate, the substrate having a flat portion, the method comprising:

• forming a dielectric layer over the substrate, the dielectric layer having a dielectric layer area, and a periphery of the dielectric layer and a periphery of the flat portion of the substrate being separated by a distance ranging from about 0.25% to about 0.45% of a diameter of the substrate;
• and
• forming a conductive layer over the dielectric layer, the conductive layer having a conductive layer area,
• a ratio of the conductive layer area to the dielectric layer area ranging from about 99.5% to about 110%.