Three-dimension circuit structure and semiconductor device

A semiconductor device, disposed on a base plate, the semiconductor device comprising:

• a substrate, having an upper surface and a cavity located at the upper surface;
• a first conductive layer, having a first conductive part disposed on a portion of the upper surface of the substrate and a second conductive part covering the inside walls of the cavity;
• a filled material, filling the cavity and covering the second conductive part;
• a second conductive layer, having a third conductive part covering the first conductive part and a fourth conductive part covering the filled material and a portion of the second conductive part, wherein the first conductive part and the third conductive part form a gate, the second conductive part, the filled material and the fourth conductive part form a three-dimension circuit, and the three-dimension circuit is connected to the gate;
• a gate insulating layer, covering the three-dimension circuit and the gate;
• a semiconductor layer, disposed on the gate insulating layer;
• a drain, disposed on the semiconductor layer;
• and
• a source, disposed on the semiconductor layer.