Three-dimensional non-volatile memory device, memory system and method of manufacturing the same
OwnerYoo Hyun NOH, Jong Moo Choi +1inventors
InventorsYoo Hyun NOH, Jong Moo Choi, Young Soo Ahn
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Abstract
A three-dimensional (3-D) non-volatile memory device includes channel structures each including channel layers stacked over a substrate and extending in a first direction, wherein the channel layers include well regions, respectively, vertical gates located and spaced from each other between the channel structures, and a well pick-up line contacting on the well regions of the channel layers and extending in a second direction crossing the channel structures.
Claims17
A three-dimensional (3-D) non-volatile memory device, comprising:
- channel structures each including channel layers stacked over a substrate and extending in a first direction, wherein the channel layers include well regions, respectively;
- vertical gates located and spaced from each other between the channel structures;
- and
- a well pickup line contacting on the well regions of the channel layers and extending in a second direction crossing the channel structures.
A memory system, comprising:
- a three-dimensional (3-D) non-volatile memory device including channel structures each having channel layers that are stacked over a substrate and includes respective well regions, vertical gates located and spaced from each other between the channel structures, and a well pickup line contacting on the well regions of the channel layers and extending in a direction crossing the channel structures;
- and
- a memory controller configured to control the 3-D non-volatile memory device.
A method of manufacturing a three-dimensional (3-D) non-volatile memory device, the method comprising:
- forming channel structures each including channel layers and interlayer insulating layers stacked alternately over a substrate, wherein the channel layers include well regions, respectively;
- forming vertical gates spaced from each other between the channel structures;
- and
- forming a well pickup line contacting on the well regions of the channel layers and extending in a direction crossing the channel structures.
Dependencies are inferred from the claim text.