3d non-volatile memory device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsKi Hong LEE, Seung Ho PYI, Seok Min JEON
Life of this patent
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Abstract
A 3D non-volatile memory device includes a pipe gate, at least one first channel layer including a first pipe channel layer formed in the pipe gate and a pair of first source side channel layer and first drain side channel layer connected to the first pipe channel layer, and at least one second channel layer including a second pipe channel layer formed in the pipe gate and positioned over the first pipe channel layer and a pair of second source side channel layer and second drain side channel layer connected to the second pipe channel layer.
Claims26
A 3D non-volatile memory device comprising:
- a pipe gate;
- at least one first channel layer including a first pipe channel layer formed in the pipe gate and a pair of first source side channel layer and first drain side channel layer connected to the first pipe channel layer;
- and
- at least one second channel layer including a second pipe channel layer formed in the pipe gate and positioned over the first pipe channel layer and a pair of second source side channel layer and second drain side channel layer connected to the second pipe channel layer.
A method for manufacturing a 3D non-volatile memory device, the method comprising:
- etching a first conductive layer to form first pipe trenches;
- forming first sacrificial layers in the first pipe trenches;
- forming a second conductive layer on the first conductive layer with the first sacrificial layers formed therein;
- etching the second conductive layer to form second pipe trenches;
- forming second sacrificial layers in the second pipe trenches;
- and
- alternately forming first material layers and second material layers on the second conductive layer with the second sacrificial layers formed therein.
Dependencies are inferred from the claim text.