Semiconductor device and display device including the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorSeiichi YONEDA
Life of this patent
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Abstract
A first transistor and a second transistor are stacked. The first transistor and the second transistor have a gate electrode in common. At least one of semiconductor films used in the first transistor and the second transistor is an oxide semiconductor film. With the use of the oxide semiconductor film as the semiconductor film in the transistor, high field-effect mobility and high-speed operation can be achieved. Since the first transistor and the second transistor are stacked and have the gate electrode in common, the area of a region where the transistors are disposed can be reduced.
Claims18
A semiconductor device comprising:
- a first transistor comprising:
- a first semiconductor film;
- a first insulating film over the first semiconductor film;
- and
- a gate electrode over the first insulating film;
- and
- a second transistor comprising:
- the gate electrode;
- a second insulating film over the gate electrode;
- and
- a second semiconductor film over the second insulating film,
- wherein the first transistor and the second transistor are stacked, and
- wherein at least one of the first semiconductor film and the second semiconductor film is an oxide semiconductor film.
A semiconductor device comprising:
- a first transistor comprising:
- a first semiconductor film;
- a first conductive film at least partly in contact with the first semiconductor film;
- a second conductive film at least partly in contact with the first semiconductor film;
- a first insulating film over the first semiconductor film;
- and
- a gate electrode over the first insulating film;
- and
- a second transistor comprising:
- the gate electrode;
- a second insulating film over the gate electrode;
- a second semiconductor film over the second insulating film;
- a third conductive film at least partly in contact with the second semiconductor film;
- and
- a fourth conductive film at least partly in contact with the second semiconductor film,
- wherein the first transistor and the second transistor are stacked, and
- wherein at least one of the first semiconductor film and the second semiconductor film is an oxide semiconductor film.
A semiconductor device comprising:
- a first transistor comprising:
- a first semiconductor film;
- a first conductive film at least partly in contact with the first semiconductor film;
- a second conductive film at least partly in contact with the first semiconductor film;
- a first insulating film over the first semiconductor film;
- and
- a gate electrode over the first insulating film;
- and
- a second transistor comprising:
- the gate electrode;
- a second insulating film over the gate electrode;
- a second semiconductor film over the second insulating film;
- a third insulating film over the second semiconductor film;
- a third conductive film at least partly in contact with the second semiconductor film;
- and
- a fourth conductive film at least partly in contact with the second semiconductor film,
- wherein the first transistor and the second transistor are stacked,
- wherein the third conductive film and the fourth conductive film are provided over the third insulating film, and
- wherein at least one of the first semiconductor film and the second semiconductor film is an oxide semiconductor film.
Dependencies are inferred from the claim text.