Method of fabricating a semiconductor device
OwnerHonggun KIM, Seung-Heon Lee +3inventors
InventorsHonggun KIM, Seung-Heon Lee, Mansug Kang, ByeongJu Bae, Eunkee Hong
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Abstract
A method of fabricating a semiconductor device, the method including forming a mask layer on a semiconductor substrate; forming a trench in the semiconductor substrate using the mask layer as an etch mask; forming a first layer in the trench; and performing a first thermal treatment process on the first layer such that the first thermal treatment process is performed under an atmosphere that includes ozone and water vapor and transforms the first layer into a second layer.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- forming a mask layer on a semiconductor substrate;
- forming a trench in the semiconductor substrate using the mask layer as an etch mask;
- forming a first layer in the trench;
- and
- performing a first thermal treatment process on the first layer such that the first thermal treatment process is performed under an atmosphere that includes ozone and water vapor and transforms the first layer into a second layer.
A method of fabricating a semiconductor device, the method comprising:
- providing a semiconductor substrate;
- forming a mask layer on the semiconductor substrate;
- forming a trench in the semiconductor substrate using the mask layer as an etch mask;
- forming a coating material in the trench;
- and
- performing a thermal treatment process on the coating material such that the thermal treatment process is performed under an atmosphere that includes ozone and water vapor and transforms the coating material into an insulation layer.
Dependencies are inferred from the claim text.