Back to results
US 2013/0075834 A1Published application
Bulk Silicon Moving Member with Dimple
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Pao Shu, Chia-Hua Chu
Life of this patent
Estimating the term…
Abstract
A method for forming a semiconductor device includes forming a substrate, forming a moveable member of bulk silicon and forming a first dimple structure on a first surface of the moveable member, where the first surface faces the substrate.
Claims20
A semiconductor device, comprising:
- a substrate;
- an insulator layer over the substrate, the insulator layer including two portions surrounding a cavity, at least one of the portions including a first signaling component;
- and
- a bulk silicon layer over the insulator layer, the bulk silicon layer including three portions,
- wherein two of the three portions of the bulk silicon layer are over the two portions of the insulator layer, wherein one of the two portions of the bulk silicon layer includes a second signaling component to engage with the first signaling component, and wherein the third portion of the bulk silicon layer is separate from the other two portions and is disposed within the cavity.
2 more elements
A Micro-Electro-Mechanical Systems (MEMS) device comprising:
- a substrate;
- an insulator layer disposed on the substrate and including a first signal routing layer, the insulator layer defining a cavity;
- and
- a silicon layer disposed on the insulator layer and further defining the cavity, the silicon layer including a portion within the cavity, the portion being configured as a moveable member within the cavity, the silicon layer further including a polysilicon via in communication with the first signal routing layer.
1 more element
A semiconductor device comprising:
- a Micro-Electro-Mechanical Systems (MEMS) device built on a substrate, the MEMS device including:
- an insulator layer disposed on the substrate and defining a cavity;
- a first signal routing layer formed within the insulator layer, the first signal routing layer comprising polysilicon;
- a bulk silicon layer disposed on the insulator layer and including a moveable member within the cavity, the moveable member including a polysilicon dimple within the cavity;
- and
- an upper member constraining movement of the moveable member between the substrate and the upper member.
3 more elements
Dependencies are inferred from the claim text.