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US 2013/0075753 A1Published application
Semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorsFumio Yamada, Takeshi Araya
Life of this patent
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Abstract
A semiconductor device includes: a substrate comprised of gallium nitride; an active layer provided on the substrate; a first buffer layer that is provided between the substrate and the active layer and is comprised of indium aluminum nitride (InxAl1−xN, 0.15≦x≦0.2); and a spacer layer that is provided between the first buffer layer and the active layer and is comprised of aluminum nitride having a thickness of 1 nm or more to 10 nm or less.
Claims19
A semiconductor device comprising:
- a substrate comprised of gallium nitride;
- an active layer provided on the substrate;
- a first buffer layer that is provided between the substrate and the active layer and is comprised of indium aluminum nitride (InxAl1−xN, 0.15≦x≦0.2);
- and
- a spacer layer that is provided between the first buffer layer and the active layer and is comprised of aluminum nitride having a thickness of 1 nm or more to 10 nm or less.
2 more elements
A semiconductor device comprising:
- a substrate comprised of gallium nitride;
- an active layer provided on the substrate;
- a first buffer layer that is provided between the substrate and the active layer and is comprised of indium aluminum nitride (InxAl1−xN, 0.15≦x≦0.2);
- and
- a second buffer layer that is provided between the substrate and the first buffer layer and is comprised of i-type gallium nitride or insulating gallium nitride.
2 more elements
Dependencies are inferred from the claim text.