Thin film transistor
AssigneeHon Hai Precision Industry Co., Ltd.
InventorJIAN-SHIHN TSANG
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Abstract
A thin film transistor for a semiconductor device is disclosed. The thin film transistor comprises a substrate; a channel region formed on the substrate, the channel region being made of a first oxide semiconductor material; a source region and a drain region formed on each of lateral sides of the channel region, the source region and the drain region being made of a second oxide semiconductor material, the second oxide semiconductor material having a band gap smaller than a band gap of the first oxide semiconductor material; a gate electrode formed on the channel region; and a gate insulating layer sandwiched between the gate electrode and the channel region.
Claims19
A thin film transistor, comprising:
- a substrate;
- a channel region formed on the substrate, the channel region being made of a first oxide semiconductor material;
- a source region and a drain region formed on each of lateral sides of the channel region, the source region and the drain region being made of a second oxide semiconductor material, the second oxide semiconductor material having a band gap smaller than a band gap of the first oxide semiconductor material;
- a gate electrode formed on the channel region;
- and
- a gate insulating layer sandwiched between the gate electrode and the channel region.
A thin film transistor, comprising:
- a substrate;
- a channel region formed on the substrate, the channel region being made of a first oxide semiconductor material;
- a source region and a drain region formed on the substrate;
- wherein the source regions and the drain region are electrically connected to the channel region;
- the source region and the drain region are made of a second oxide semiconductor material;
- and the second oxide semiconductor material has a band gap smaller than a band gap of the first oxide semiconductor material;
- and
- a gate electrode electrically connected to the channel region, and is spaced from the source region and the drain region.
A thin film transistor, comprising:
- a substrate;
- a channel region formed on the substrate, the channel region being made of a first oxide semiconductor material;
- and
- a source region and a drain region formed on each of lateral sides of the channel region, the source region and the drain region being made of a second oxide semiconductor material, the second oxide semiconductor material having a concentration of carriers greater than a concentration of carriers of the first oxide semiconductor material.
Dependencies are inferred from the claim text.