Patterning process and materials for lithography

A method comprising:

• forming a photoresist layer over a material layer;
• performing a first exposure process on the photoresist layer, thereby forming an exposed photoresist layer having soluble portions and unsoluble portions;
• treating the exposed photoresist layer, wherein the treating includes one of performing a second exposure process on the exposed photoresist layer and forming an adsorbing chemical layer over the exposed photoresist layer;
• and
• developing the exposed and treated photoresist layer to remove the soluble portions of the photoresist layer, wherein the unsoluble portions of the photoresist layer form a photoresist pattern that exposes portions of the material layer.

A material layer for reducing an attraction force between a photoresist layer and residual particles in a lithography process, wherein the material layer includes an adsorbing chemical represented by a formula:

• wherein:
• Rh is a hydrocarbon backbone;
• L is a linking group, wherein the linking group has a high affinity for a polymer of an exposed photoresist layer;
• and
• F is a repulsive group, wherein the repulsive group has a polarity less than the polymer in the exposed photoresist layer.