Modeling euv lithography shadowing effect
AssigneeSynopsys, Inc.
InventorsHua Song, James P. Shiely, Lena Zavyalova
Life of this patent
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Abstract
Systems and techniques for modeling the EUV lithography shadowing effect are described. Some embodiments described herein provide a process model that includes an EUV lithography shadowing effect component. Polygon edges in a layout can be dissected into a set of segments. Next, the EUV lithography shadowing effect component can be used to bias each segment. The modified layout having the biased segments can then be used as input for other components in the process model.
Claims19
A method for modeling extreme ultraviolet (EUV) lithography shadowing effect, the method comprising:
- receiving location information of a segment in a layout;
- calculating a bias direction and a bias distance using an EUV lithography shadowing effect component and the location information of the segment;
- and
- biasing, by computer, the segment based on the calculated bias direction and bias distance.
A non-transitory computer-readable storage medium storing instructions that, when executed by a computer, cause the computer to perform a method for modeling extreme ultraviolet (EUV) lithography shadowing effect, the method comprising:
- receiving location information of a segment in a layout;
- calculating a bias direction and a bias distance using an EUV lithography shadowing effect component and the location information of the segment;
- and
- biasing the segment based on the calculated bias direction and bias distance.
An apparatus for modeling extreme ultraviolet (EUV) lithography shadowing effect, the apparatus comprising:
- a receiving mechanism configured to receive location information of a segment in a layout;
- a calculating mechanism configured to calculate a bias direction and a bias distance using an EUV lithography shadowing effect component and the location information of the segment;
- and
- a biasing mechanism configured to bias the segment based on the calculated bias direction and bias distance.
Dependencies are inferred from the claim text.