Method of manufacturing semiconductor devices
AssigneeHynix Semiconductor Inc.
InventorMin Gyu KOO
Life of this patent
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Abstract
A method of manufacturing semiconductor devices includes forming a plurality of patterns spaced apart from each other on a semiconductor substrate, forming a filling layer, not removed in a subsequent process of forming a mask pattern and where the filling layer formed to have a lower height than the plurality of patterns, between the plurality of patterns, forming a mask layer on the entire structure where the filling layer is formed, and forming the mask pattern by removing some of the mask layer so that some of the plurality of patterns is removed.
Claims19
A method of manufacturing semiconductor devices, comprising:
- forming a plurality of patterns spaced apart from each other on a semiconductor substrate;
- forming a filling layer, not removed in a subsequent process of forming a mask pattern and where the filling layer is formed to have a lower height than a height of the plurality of patterns, between the plurality of patterns;
- forming a mask layer on an entire structure where the filling layer is formed;
- and
- forming the mask pattern by removing some of the mask layer so that some of the plurality of patterns is removed.
A method of manufacturing semiconductor devices, comprising:
- forming a first gate and second gate over a substrate, wherein the first gate is arranged in a first region of the substrate, and the second gate is arranged in a second region of the substrate;
- forming a filling layer, having a lower height than the first gate and the second gate, between the first gate and the second gate adjacent to each other, and between the second gates;
- forming a mask pattern blocking a top surface of the first region and opening a top surface of the second region;
- and
- implanting impurities into the second region of the semiconductor substrate by performing an impurity implantation process through the filling layer exposed by the mask pattern.
A method of manufacturing semiconductor devices, comprising:
- forming a first gate and a second gate over a semiconductor substrate, wherein the first gate arranged in a first region of the substrate, and the second gate arranged in a second region of the substrate;
- forming a first impurity region in the first and the second regions by a blanket impurity implantation process using the first and the second gates as a mask;
- forming a filling layer, having a lower height than the first and the second gates, between the first and the second gate adjacent to each other and between the second gates;
- forming a photoresist pattern, blocking a top surface of the first region, but opening a top surface of the second region, by a photolithography process;
- and
- forming a second impurity region in the second region by performing an impurity implantation process through the filling layer exposed by the photoresist pattern,
- wherein the filling layer is not removed by the photolithography process.
Dependencies are inferred from the claim text.