SCRIBE LINE TEST MODULES FOR IN-LINE MONITORING OF CONTEXT DEPENDENT EFFECTS FOR ICs INCLUDING MOS DEVICES

A method of generating in-line data for monitoring context dependent effect parameters for MOS devices, comprising:

• providing a semiconductor wafer comprising a semiconductor substrate having a plurality of die areas and scribe line areas between said die areas, integrated circuit die with active circuit elements for performing a circuit function formed on said die areas, and at least one test module formed in said scribe line areas, wherein said at least one test module includes a reference layout that includes at least one active reference MOS transistor, said active reference MOS transistor in said reference layout having a reference spacing value for each of a plurality of context dependent effect parameters, and a plurality of variant layouts, each of said variant layouts providing at least one active variant MOS transistor that provides a variation with respect to said reference spacing values for at least one of said plurality of context dependent effect parameters;
• testing a plurality of said test modules to obtain electrical test measurement data from each of said test modules comprising measurement data from said active reference MOS transistor and measurement data from said plurality of said active variant MOS transistors;
• and
• processing said electrical test measurement data to generate measurements for said plurality of said context dependent effect parameters from each of said plurality of test modules.