Methods of Manufacturing Semiconductor Devices and Structures Thereof

A semiconductor device comprising:

• a semiconductor substrate;
• an etch stop layer disposed over the semiconductor substrate, the etch stop layer including a potentially damaging substance for a photosensitive material;
• a transition layer disposed over the etch stop layer, the transition layer configured to prevent the potentially damaging substance from leaving the etch stop layer;
• an insulating layer disposed over the transition layer, wherein the insulating layer is patterned with a first pattern in a lower portion and wherein the insulating layer is patterned with a second pattern in an upper portion, the second pattern being different than the first pattern;
• and
• a conductive layer disposed within the first pattern and the second pattern of the insulating layer.

A layer arrangement comprising:

• a substrate;
• an first material layer disposed over the substrate, the first material layer having a top surface and including a potentially damaging substance for a material layer disposed above a second material layer;
• a transition layer disposed directly over the first layer, the transition layer configured to prevent the potentially damaging substance from leaving the top surface of the first layer;
• the second material layer disposed over the transition layer, the second material layer being patterned with a first pattern in a lower portion;
• and
• a third material layer disposed within the first pattern of the second material layer, the third material layer comprising a different material than the second material layer.