Series FinFET Implementation Schemes

A device comprising:

• a series fin field-effect transistor (FinFET) comprising:
• a first semiconductor fin;
• a second semiconductor fin parallel to the first semiconductor fin, wherein outer boundaries of the first and the second semiconductor fin define a first rectangular region in a top view of the series FinFET;
• a first and a second gate dielectric on top surfaces and sidewalls of the first and the second semiconductor fins;
• a gate electrode over the first and the second semiconductor fins and separated from the first and the second semiconductor fins by the first and the second gate dielectrics, respectively;
• and
• a first electrical connection on a side of the gate electrode and interconnecting portions of the first and the second semiconductor fins not covered by the gate electrode.

A device comprising:

• a series fin field-effect transistor (FinFET) comprising:
• a first, a second, and a third semiconductor fin parallel to each other;
• and
• a straight gate electrode perpendicular to the first, the second, and the third semiconductor fins, and forming a first, a second, and a third FinFET of a same conductivity type with the first, the second, and the third semiconductor fins, respectively;
• a first electrical connection on a first side of the straight gate electrode and interconnecting a first source/drain of the first FinFET to a first source/drain of the second FinFET;
• and
• a second electrical connection on a second side of the straight gate electrode and connecting a second source/drain of the second FinFET to a second source/drain of the third FinFET.