Wafer profile modification through hot/cold temperature zones on pedestal for semiconductor manufacturing equipment

A substrate support comprising:

• a top ceramic plate providing a substrate support surface for supporting a substrate during substrate processing;
• an substrate pedestal having fluid channels formed therein, the fluid channels adapted to circulate a heat transfer fluid through the pedestal as a primary mechanism to control a temperature of the substrate support surface;
• a thermoelectric deck sandwiched between the top ceramic plate and substrate pedestal, the thermoelectric deck having a base plate, a deck cover, and a plurality of thermoelectric elements positioned between the base plate and the deck cover arranged in at least two independently controlled temperature zones with each independently controlled temperature zone including a temperature sensor, wherein in each independently controlled temperature zone the thermoelectric deck can either heat or cool the substrate support surface in that zone in response to readings from temperature sensor associated with the zone thereby providing a secondary mechanism to adjust the temperature of the substrate support surface set primarily by circulating a heat transfer medium through the fluid channels.