Slurry Composition Having Tunable Dielectric Polishing Selectivity And Method Of Polishing A Substrate

A method of making the chemical mechanical polishing slurry composition, comprising:

• providing water;
• providing an abrasive;
• providing a halogenated quaternary ammonium compound according to formula (I):
• wherein R8 is selected from a C1-10 alkyl group and a C1-10 hydroxyalkyl group;
• wherein X1 is a halide selected from chloride, bromide, iodide and fluoride;
• wherein R9, R10 and R11 are each independently selected from a saturated or unsaturated C1-10 alkyl group, a C1-10 haloalkyl group, a C6-15 aryl group, a C6-15 haloaryl group, a C6-15 arylalkyl group and a C6-15 haloarylalkyl;
• and, wherein the anion in formula (I) can be any anion that balances the + charge on the cation in formula (I);
• and,
• optionally, providing a diquaternary substance according to formula (II):
• wherein each A is independently selected from N and P;
• wherein R1 is selected from a saturated or unsaturated C1-C15 alkyl group, a C6-C15 aryl group and a C6-C15 aralkyl group;
• wherein R2, R3, R4, R5, R6 and R7 are each independently selected from selected from a hydrogen, a saturated or unsaturated C1-C15 alkyl group, a C6-C15 aryl group, a C6-C15 aralkyl group and a C6-C15 alkaryl group;
• and, wherein the anion in formula (II) can be any anion or combination of anions that balance the 2+ charge on the cation in formula (II);
• providing a pH adjusting agent;
• combining the water;
• the abrasive;
• the halogenated quaternary ammonium compound according to formula (I);
• and, the optional diquaternary substance according to formula (II) to form the chemical mechanical polishing slurry composition;
• and,
• adding the pH adjusting agent to the slurry as necessary to adjust the pH of the chemical mechanical polishing slurry composition to <7.