Methods of creating a micro electro-mechanical systems accelerometer using a single double silicon-on-insulator wafer
AssigneeHoneywell International Inc.
InventorLianzhong Yu
Life of this patent
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Abstract
Methods for creating a microelectromechanical systems (MEMS) device using a single double, silicon-on-insulator (SOI) wafer. The double SOI wafer includes at least a base layer of silicon, a first layer of silicon, and a second layer of silicon, the layers of silicon are separated by an oxide layer. A stationary electrode with rigid support beams is formed into the second layer of silicon. A proof mass and at least one spring are formed into the first layer of silicon. The proof mass is separated from the stationary electrode by a first gap and the proof mass is separated from the base silicon layer by a second gap.
Claims5
A method for creating a microelectromechanical systems (MEMS) device using a double, silicon-on-insulator (SOI) wafer, wherein the double SOI wafer comprises a base layer of silicon, a first layer of silicon, and a second layer of silicon, the layers of silicon are separated by an oxide layer, the method comprising:
- a) forming a stationary electrode with rigid support beams into the second layer of silicon;
- and
- b) forming a proof mass and at least one spring into the first layer of silicon, wherein the proof mass is separated from the stationary electrode by a first gap and the proof mass is separated from the base silicon layer by a second gap.
Dependencies are inferred from the claim text.