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US 2011/0299325 A1Published application
SRAM Devices And Methods Of Manufacturing The Same
AssigneeSamsung Electronics Co., Ltd.
InventorYongshik Kim
Life of this patent
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Abstract
Example embodiments relate to an SRAM device and a method of manufacturing the same. The SRAM device may include first transistors operating in a horizontal direction and second transistors that are disposed on the first transistors to operate in a vertical direction. In example embodiments, the second transistors may be vertically connected to the first transistors. In example embodiments, the second transistors may be vertical transistors that include vertical gates surrounding vertical channels.
Claims19
An SRAM device, comprising:
- first transistors configured to operate in a horizontal direction;
- and
- second transistors on the first transistors, the second transistors configured to operate in a vertical direction, the second transistors being vertically connected to the first transistors,
- wherein the second transistors are vertical transistors including vertical gates and vertical channels surrounded by the vertical gates.
1 more element
14-20. (canceled)
An SRAM device, comprising:
- a first access transistor, a second access transistor, a first driver transistor, and a second driver transistor on a first substrate;
- a first load transistor on the second driver transistor and a second load transistor on the first driver transistor;
- a first shared contact electrically connecting a gate of the first load transistor to a source of the second access transistor and electrically connecting the gate of the first load transistor to a gate of the first driver transistor;
- a second shared contact electrically connecting a gate of the second load transistor to a source of the first access transistor and electrically connecting the gate of the second load transistor to a gate of the second driver transistor;
- a first contact between the second load transistor and a gate of the first driver transistor to electrically connect the second load transistor to the first driver transistor;
- and
- a second contact between the first load transistor and a gate of the second driver transistor to electrically connect the first load transistor to the second driver transistor, wherein the first access transistor, the second access transistor, the first driver transistor, and the second driver transistor are configured to operate horizontally and the first and second load transistors are configured to operate vertically.
4 more elements
Dependencies are inferred from the claim text.