Back to results
US 2011/0256710 A1Published application
Semiconductor device and method for manufacturing same
AssigneeRenesas Electronics Corporation
InventorNaoyoshi KAWAHARA
Life of this patent
Estimating the term…
Abstract
When a metal cap film is provided on an electric fuse, the break-ability of the electric fuse is reduced. A semiconductor device 1 includes interconnects 10, an electric fuse 20 and metal cap films 30. Both of the interconnects 10 and the electric fuse 20 are composed of Cu. The interconnects 10 and the electric fuse 20 are provided in the same layer in the interconnect layer 40. The metal cap films 30 are provided only on the interconnects 10 and not provided on the electric fuse 20.
Claims6
A method for manufacturing a semiconductor device, comprising:
- forming an interconnect in an interconnect layer;
- forming an electric fuse in said interconnect layer that also includes said interconnect;
- and
- forming a metal cap film only on said interconnect except on said electric fuse.
1 more element
Dependencies are inferred from the claim text.