Process for fabricating non-volatile storage

A method for fabricating non-volatile storage, comprising:

• creating gate stacks;
• applying fluorine to a top surface of the gate stacks;
• providing a metal;
• performing a silicidation process for the metal and the gate stacks, the applying fluorine is performed prior to the silicidation process;
• and
• adding control lines.

A method for fabricating non-volatile storage, comprising:

• creating gate stacks with hard masks on top of the gate stacks, the gate stacks include two polysilicon layers and a dielectric layer between the two polysilicon layers, the two polysilicon layers include a lower polysilicon layer and an upper polysilicon layer;
• removing a portion of the hard masks, leaving two separate tapered sections of each of the hard masks positioned above the upper polysilicon layer of the gate stacks;
• after the removing the portion of the hard masks, implanting fluorine into the upper polysilicon layer of the gate stacks;
• adding metal on a top surface of the upper polysilicon layer of the gate stacks after implanting the fluorine;
• performing a silicidation process for the metal and the upper polysilicon layer of the gate stacks;
• removing the tapered sections;
• and
• adding control lines.