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AssigneeAir Products and Chemicals, Inc.
InventorsSergei Vladimirovich Ivanov, Xinjian Lei, Hansong Cheng, Daniel P. Spence, Moo-Sung Kim
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A method for forming metal-containing films by atomic layer deposition using precursors of the formula: M(OR1)(OR2)(R3C(O)C(R4)C(O)XR5y)2 wherein M is Group 4 metals; wherein R1 and R2 can be same or different selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl; R3 can be selected from the group consisting of linear or branched C1-10 alkyls, preferably C1-3 alkyls and a C6-12 aryl; R4 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen; R5 is selected from the group consisting of C1-10 linear or branched alkyls, and a C6-12 aryl, preferably a methyl or ethyl group; X═O or N wherein when X═O, y=1 and R1, 2 and 5 are the same, when X═N, y=2 and each R5 can be the same or different.
A method for deposition of at least one metal containing film selected from the group consisting of titanium, hafnium and zirconium under atomic layer deposition conditions onto a substrate comprising contacting the substrate with a composition having the formula:
A method for deposition of at least one metal containing film selected from the group consisting of titanium, hafnium and zirconium under atomic layer deposition conditions onto a substrate comprising contacting the substrate with a composition of Formula I, below:
A method for deposition of at least one metal containing film selected from the group consisting of titanium, hafnium and zirconium under atomic layer deposition conditions onto a substrate comprising contacting the substrate with a composition of Formula II, below:
Dependencies are inferred from the claim text.